Static-Deposition-Module for High Rate Sputter Deposition of Metallic and Non-conducting Materials

Features:

• DC and RF sputter deposition selectable by recipe
• HighPIMS capability
• Variable distance between substrate and sputter target
• Ultra-high vacuum technology, base pressure < 5*10^-8 Torr

The Single-Target-Module (STM) comprises a standard magnetron cathode with optimized target utilization for high rate sputter deposition of metallic and non-conducting materials for multiple applications. DC magnetron as well as RF magnetron sputter modes are selectable through a recipe menu. The module is used for deposition of films with high deposition rate.

Four-Target-Module (FTM) with 4 DC/RF Cathodes

Features:

• DC/RF magnetron
• All sputter deposition modes selectable by recipe for all 4 cathodes
• LDD technology
• RF bias option
• Ultra-high vacuum technology
• Base pressure < 8*10^-9 Torr
• Wafer heating and cooling

The Four-Target-Module (FTM) incorporates Linear Dynamic Deposition (LDD) technology in combination with up to four sputter targets in one vacuum chamber.

The FTM incorporates the same functionalities as the Multi-Target-Module (MTM) such as the substrate heating, the Aligning Magnetic Field (AMF) and the capability to deposit wedge films with a different film thickness across the wafer and to deposit alloy films with adjustable concentration gradients across one wafer. Having four, large targets the FTM is particularly designed for deposition of periodic multi-layers with high wafer throughput.

Multi-Target-Module (MTM) with 10 DC/RF Cathodes

Features:

• DC/RF magnetron
• All sputter deposition modes selectable by recipe for all 10 cathodes
• LDD technology
• RF bias option
• Ultra-high vacuum technology, base pressure
• 8*10^-9 Torr
• Wafer heating and cooling (options)

Multiple film stack deposition, without the need to break ultra-high vacuum, is one of the key advantages of the MTM process module. Additional features such as wafer heating for hot substrate deposition (option) or a collinear Aligning Magnetic Field (AMF) are available. The AMF can be activated to align the magnetic easy axis during deposition of  ferromagnetic films. The Linear Dynamic Deposition (LDD) technology enables the capability to deposit wedge films with a different film thickness across the wafer and to deposit alloy films with adjustable concentration gradients across one wafer. Both features allow a very cost effective development of film stacks and accelerate the devices development.

The LDD technology is the key to delivering world class material uniformity across large wafers and exceptional precise control of ultra- thin layer thickness down to 1 % of a nanometer.

Rotating-Substrate Module (RSM)

Featuring 12 targets, DC/RF and various options to tilt and rotate the wafer, the Rotating-Substrate Module allows maximum flexibility for Production and Advanced Research in the Semiconductor Industry.

Details:

• 300 mm and 200 mm wafer
• Up to 12 PVD cathodes, target Ø 100 mm
• Co-sputtering
• DC/RF sputtering
• Base pressure < 10^-8 Torr
• Ion beam source (option)
• In-situ aligning magnetic field (option)
• Wafer heating (option)

The name-giving characteristic feature of the RSM is the sputter deposition onto a rotating substrate. Tilting of the substrate stage as well as the rotating speed are parameters to control the properties of the deposited films. The RSM can be equipped with up to 12 PVD cathodes with a target diameter of 100 mm. Co-sputtering with up to four cathodes utilizing DC/pulsed DC and RF mode are additional important technologies for any R&D work. The ultra-high vacuum base pressure down to < 10-8 Torr makes the RSM a perfect tool for depositing extremely thin films and stacks of such films as typical for magneto-electronic applications.

Applications:

• Material evaluation due to co-sputter
• Low initial costs on targets – COO
• Flexible process configuration
• Small footprint

The Pre-Clean-Module (PCM) – Cleaning of Wafer prior to Deposition

Features

• Wafer cleaning, removal of native oxides by sputter etch
• ECWR plasma source as option
• Variable distance between substrate and ion source
• Degas heater as option
• Ultra-high vacuum technology, base pressure < 5*10^-8 Torr

The Pre-Clean-Module (PCM) is used to clean the wafer prior to deposition. This is a standard technique employing sputter etch technology by applying RF power to the wafer. Typically, the process removes residual water and other molecules and native oxides by adjusting the  etching process parameters. Optionally, this module can also be equipped with an ECWR plasma source. This additional plasma source provides a more flexible etching process (higher etch rates, lower etching energies). The module geometry (large plasma source, rotational symmetric pump system) ensures a high uniformity of the etching.

Rapid Cooling Module (RCM) for fast Cooling the Wafer up to -100 °C

Features

• Rapid wafer cooling
• Ultra High Vacuum back pressure < 1*10^-8 Torr
• Temperature up to -100 ºC

Module for rapid wafer cooling of single wafers. This module allows to cool down the wafer after the heating process and before the deposition process without breaking the vacuum.

Oxidation of Ultra-thin Metallic Films into Insulating Films/Oxidation and Pre-clean in one Module

Features:

• Low energy remote plasma oxidation
• Natural oxidation
• Surface treatment by low energetic ions
• Wafer cleaning, removal of native oxides by sputter etch
• Variable distance between substrate and ion source
• Ultra-high vacuum technology, base pressure < 5*10^-8 Torr

The Oxidation-Process-Module (OPM) is required to oxidize ultra-thin metallic films into insulating films of very high quality. Such films are required in tunnel magneto resistance layer stacks as tunneling barriers. The oxidation can be performed by using a remote plasma provided by a ECWR plasma source. This source generates oxygen ions and radicals of very low adjustable energy. Alternatively, the oxidation can be performed by the so-called natural oxidation by exposing the metal film to pure oxygen of low pressure (10 Torr down to 0.1 m Torr). The module geometry (large plasma source, rotational symmetric pump system) ensures a high uniformity of the oxidation.

The Combi-Process-Module (CPM) comprises both technologies of oxidation and pre-clean in one module. This is a cost-efficient option, since only one module for two process steps is required. It is mainly envisaged for R&D purposes, where a high throughput is of less importance. The process performance is identical with the Oxidation-Module and the Pre-Clean-Module.

R&D System for Thermal Processing of Wafers

Features:

• Thermal Processing by Annealing of wafers → Ultra High Vacuum back pressure < 1*10^-8 Torr
• Ultra High Vacuum back pressure during annealing < 5*10^-8 Torr
• Temperature up to 600 ºC
• High temperature uniformity
• High temperature stability

Module for in-situ Thermal Processing of single wafers. This module allows to bake a substrate (wafer) within the system without breaking the vacuum and subsequent further deposition.